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| MMBTSC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC2785 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group O Y G L Collector Base Breakdown Voltage at IC=100A Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10A Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA, f=1KHz, RS=500 NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.3 V IEBO 0.1 A ICBO 0.1 A V(BR)EBO 5 V V(BR)CEO 50 V V(BR)CBO 60 V hFE hFE hFE hFE 70 120 200 350 140 240 400 700 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 |
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